Detector Data Sheets

 

Home Applications ELTECdata Notes Detector Data Sheets High Megohm Resistors IR Thermal Telescopes

 

 

                                     

Model 400 - Single 2mm diameter active sensing element UV/Visible/IR detector with no integral electronics. Enclosed in a T0-5 transistor housing.

Model 405 - Thermally compensated IR detector with JFET high gain electronics. Parallel opposed dual (POD) configuration with two separate 1mm x 2.5mm active sensing elements in an over/under configuration. Enclosed in a T0-5 transistor housing.

Model 405M6 - Thermally compensated IR detector with JFET high gain electronics. Parallel opposed dual (POD) configuration with two separate 2.5mm square active sensing elements (top element blackened) in an over/under configuration. Enclosed in a T0-5 transistor housing.

Model 406 - Single 2mm diameter active sensing element IR detector with JFET source follower electronics. Enclosed in a T0-5 transistor housing.

Model 406M39 - Single 2mm diameter active sensing element IR detector with JFET high gain electronics. Enclosed in a T0-5 transistor housing.

Model 40623 - Single 2.5mm square active sensing element IR detector with JFET source follower electronics. Enclosed in a T0-5 transistor housing.

Model 407 - Thermally compensated IR detector with JFET source follower electronics. Parallel opposed dual (POD) configuration with two separate blackened 1mm x 2.5mm active sensing elements in an over/under configuration. Enclosed in a T0-5 transistor housing.

Model 407M24 - Thermally compensated IR detector with JFET source follower electronics. Parallel opposed dual (POD) configuration with two separate blackened 3mm square active sensing elements in an over/under configuration. Enclosed in a T0-5 transistor housing.

Model 420 - Single 2.7mm square active sensing element UV/Visible/IR detector with no integral electronics. A special element mounting technique is used to heat sink the sensing element, allowing detection at high power levels. Enclosed in a T0-5 transistor housing.

Model 420M3 - Single 5.0mm diameter active sensing element UV/Visible/IR detector with no integral electronics. A special element mounting technique is used to heat sink the sensing element, allowing detection at high power levels. Enclosed in a T0-5 transistor housing.

Model 420M7 - Single 4.5mm square active sensing element UV/Visible/IR detector with no integral electronics. A special element mounting technique is used to heat sink the sensing element, allowing detection at high power levels. Enclosed in a T0-5 transistor housing.

Model 441 - High responsivity IR detector with a single 2.5mm square active sensing element, internal current mode operational amplifier and voltage reference. Enclosed in a T0-5 transistor housing.

Model 442 - High responsivity IR detector with two separate 1mm x 2.5mm blackened active sensing elements in a side by side parallel opposed dual (POD) configuration, internal current mode operational amplifier and voltage reference. Enclosed in a T0-5 transistor housing.

Model 446 - High responsivity, thermally compensated IR detector with two separate 1mm x 2.5mm active sensing elements, in an over/under parallel opposed dual (POD) configuration, internal current mode operational amplifier and voltage reference. Enclosed in a T0-5 transistor housing.

Model 446M11 - Same as Model 446 except there is less of an offset shift in temperature.

Model 459 - Twin channel optically isolated IR detector with two separate 1mm x 2.5mm blackened active sensing elements with JFET source follower electronics. Broadband filter is included in package. Enclosed in a T0-5 transistor housing.

Model 479 - Twin channel optically isolated IR detector with two separate 1mm x 2.5mm blackened active sensing elements with JFET source follower electronics. Enclosed in a T0-5 transistor housing.

Model 479M1 - Twin channel optically isolated IR detector with two separate 1mm x 2.5mm blackened active sensing elements with JFET high gain electronics. Enclosed in a T0-5 transistor housing.

Model 481 - Single 1.5mm square blackened active sensing element IR detector with JFET source follower electronics. Enclosed in a T0-18 transistor housing.

Model 482 - Thermally compensated IR detector with JFET high gain electronics. Parallel opposed dual (POD) with two separate 1mm x 1.9mm active sensing elements in an over/under configuration. Enclosed in a T0-18 transistor housing.

Model 5192 - IR detector with JFET source follower electronics. Parallel opposed dual (POD) with two separate 1mm x 2.5mm blackened active sensing elements in a side by side configuration. Enclosed in a T0-5 transistor housing.

Model 304N / 304P - Impedance converter with N-Channel JFET or P-Channel MOSFET.